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Condensed Matter > Materials Science
Title: Stabilization of competing ferroelectric phases of HfO$_2$ under epitaxial strain
(Submitted on 23 Jan 2020 (v1), last revised 26 Sep 2020 (this version, v4))
Abstract: Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite similar structures and energies. Identifying and stabilizing the ferroelectric functional phases of HfO$_2$ have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO$_2$ are used to discover that imposing an in-plane shear strain on the tetragonal phase induces a nonpolar to polar phase transition. This in-plane shear-induced polar phase is shown to be an epitaxial distortion of a known metastable ferroelectric $Pnm2_1$ phase of HfO$_2$. It is proposed that this ferroelectric $Pnm2_1$ phase can account for the recently observed ferroelectricity in the (111)-oriented HfO$_2$-based thin film [Nature Materials 17, 1095-1100 (2018)]. Further investigation of this second functional ferroelectric phase in HfO$_2$ could potentially improve the performances of HfO$_2$-based films in logic and memory devices.
Submission history
From: Yubo Qi [view email][v1] Thu, 23 Jan 2020 17:34:59 GMT (806kb,D)
[v2] Fri, 14 Feb 2020 21:04:31 GMT (812kb,D)
[v3] Mon, 21 Sep 2020 01:44:57 GMT (633kb,D)
[v4] Sat, 26 Sep 2020 17:59:48 GMT (1528kb,AD)
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