Title: Double lattice potential for silicon for molecular dynamics simulation

Abstract: Double lattice (DL) potential, which is constructed from two interatomic potentials for face centered cubic (fcc) lattice, is proposed for molecular dynamics (MD) simulations of silicon. The potential for fcc lattice is simply the well-known Lenard-Jones (LJ) potential. The DL potential, as well as Tersoff potential, Stillinger and Weber (SW) potential, environment-dependent interatomic (EDI) potential, charge optimized many-body (COMB) potential, and modified embedded-atom (MEAM) potential has been applied for the validity test in MD simulations. By calculating the distribution functions of the distances between atoms and the angles between the lines linking an atom with its nearest neighbors and comparing the results with that of perfect silicon crystal, the crystal lattice of simulated system can be identified. The crystal lattice, the crystallization temperature, binding energy, and elastic constants for the above potentials have been calculated from MD simulations. The results have shown that the systems with Tersoff, SW, EDI, COMB, and MEAM potentials could not show the diamond structure as the one with DL potential shows. The physical parameters obtained from the simulations with DL potential are in agreement with the experiments. The paper is helpful for rethinking the nature of chemical bond and the formation of crystal.