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Condensed Matter > Materials Science

Title: Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator

Abstract: The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.
Comments: Nature Materials, in press. The final version of this article is available online at this https URL
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1038/s41563-020-00871-7
Cite as: arXiv:2002.01134 [cond-mat.mtrl-sci]
  (or arXiv:2002.01134v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Ryo Noguchi [view email]
[v1] Tue, 4 Feb 2020 05:47:09 GMT (5284kb,D)
[v2] Wed, 10 Feb 2021 09:35:54 GMT (5285kb,D)

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