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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Abstract: We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward-Dutton linear charge partition scheme that guarantees charge-conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2 FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.
Comments: 7 pages, 6 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Applied Physics (physics.app-ph)
Journal reference: npj 2D Materials and Applications, vol. 3(47), 2019
DOI: 10.1038/s41699-019-0130-6
Cite as: arXiv:2002.01499 [cond-mat.mes-hall]
  (or arXiv:2002.01499v1 [cond-mat.mes-hall] for this version)

Submission history

From: Francisco Pasadas [view email]
[v1] Tue, 4 Feb 2020 19:12:48 GMT (2571kb)

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