Current browse context:
cond-mat.mes-hall
Change to browse by:
References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
(Submitted on 4 Feb 2020)
Abstract: We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward-Dutton linear charge partition scheme that guarantees charge-conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2 FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.
Link back to: arXiv, form interface, contact.