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Computer Science > Emerging Technologies

Title: The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level

Abstract: In this study, a SPICE model for negative capacitance vertical nanowire field-effect-transistor (NC VNW-FET) based on BSIM-CMG model and Landau-Khalatnikov (LK) equation was presented. Suffering from the limitation of short gate length there is lack of controllable and integrative structures for high performance NC VNW-FETs. A new kind of structure was proposed for NC VNW-FETs at sub-3nm node. Moreover, in order to understand and improve NC VNW-FETs, the S-shaped polarization-voltage curve (S-curve) was divided into four regions and some new design rules were proposed. By using the SPICE model, device-circuit co-optimization was implemented. The co-design of gate work function (WF) and NC was investigated. A ring oscillator was simulated to analyze the circuit energy-delay, and it shown that significant energy reduction, up to 88%, at iso-delay for NC VNW-FETs at low supply voltage can be achieved. This study gives a credible method to analysis the performance of NC based devices and circuits and reveals the potential of NC VNW-FETs in low-power applications.
Subjects: Emerging Technologies (cs.ET)
Cite as: arXiv:2002.03726 [cs.ET]
  (or arXiv:2002.03726v1 [cs.ET] for this version)

Submission history

From: Weixing Huang [view email]
[v1] Sat, 18 Jan 2020 12:22:43 GMT (783kb)

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