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Condensed Matter > Materials Science

Title: Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe$_2$

Abstract: Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V$_W$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V$_W$ dopants.
Comments: 12 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: Phys. Rev. Lett. 125, 036802 (2020)
DOI: 10.1103/PhysRevLett.125.036802
Cite as: arXiv:2002.04371 [cond-mat.mtrl-sci]
  (or arXiv:2002.04371v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Pierre Mallet [view email]
[v1] Tue, 11 Feb 2020 13:38:40 GMT (2086kb,D)

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