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Quantum Physics

Title: Towards a realistic GaAs-spin qubit device for a classical error-corrected quantum memory

Abstract: Based on numerically-optimized real-device gates and parameters we study the performance of the phase-flip (repetition) code on a linear array of Gallium Arsenide (GaAs) quantum dots hosting singlet-triplet qubits. We first examine the expected performance of the code using simple error models of circuit-level and phenomenological noise, reporting, for example, a circuit-level depolarizing noise threshold of approximately 3%. We then perform density-matrix simulations using a maximum-likelihood and minimum-weight matching decoder to study the effect of real-device dephasing, read-out error, quasi-static as well as fast gate noise. Considering the trade-off between qubit read-out error and dephasing time (T2) over measurement time, we identify a sub-threshold region for the phase-flip code which lies within experimental reach.
Comments: 22 pages
Subjects: Quantum Physics (quant-ph)
Cite as: arXiv:2002.05136 [quant-ph]
  (or arXiv:2002.05136v1 [quant-ph] for this version)

Submission history

From: Manuel Rispler [view email]
[v1] Wed, 12 Feb 2020 18:29:20 GMT (2025kb)

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