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Physics > Instrumentation and Detectors
Title: Cryogenic Characterization of 180 nm CMOS Technology at 100 mK
(Submitted on 29 Feb 2020 (v1), last revised 22 May 2020 (this version, v2))
Abstract: Conventional CMOS technology operated at cryogenic conditions has recently attracted interest for its uses in low-noise electronics. We present one of the first characterizations of 180 nm CMOS technology at a temperature of 100 mK, extracting I/V characteristics, threshold voltages, and transconductance values, as well as observing their temperature dependence. We find that CMOS devices remain fully operational down to these temperatures, although we observe hysteresis effects in some devices. The measurements described in this paper can be used to inform the future design of CMOS devices intended to be operated in this deep cryogenic regime.
Submission history
From: Roger Huang [view email][v1] Sat, 29 Feb 2020 08:13:39 GMT (1121kb,D)
[v2] Fri, 22 May 2020 23:29:34 GMT (165kb,D)
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