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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers

Abstract: Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such devices. In particular, spin current is partially absorbed at the interface due to spin-orbit coupling. We develop a general magnetoelectronic circuit theory and generalize the concept of the spin mixing conductance, accounting for various mechanisms responsible for spin-flip scattering. For the special case when exchange interactions dominate, we give a simple expression for the spin mixing conductance in terms of the contributions responsible for spin relaxation (i.e., spin memory loss), spin torque, and spin precession. The spin-memory loss parameter $\delta$ is related to spin-flip transmission and reflection probabilities. There is no straightforward relation between spin torque and spin memory loss. We calculate the spin-flip scattering rates for N|N, F|N, F|F interfaces using the Landauer-B\"uttiker method within the linear muffin-tin orbital method and determine the values of $\delta$ using circuit theory.
Comments: 12 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Journal reference: Phys. Rev. B 101, 224405 (2020)
DOI: 10.1103/PhysRevB.101.224405
Cite as: arXiv:2003.12221 [cond-mat.mes-hall]
  (or arXiv:2003.12221v1 [cond-mat.mes-hall] for this version)

Submission history

From: Kirill Belashchenko [view email]
[v1] Fri, 27 Mar 2020 03:45:54 GMT (8230kb,D)

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