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Condensed Matter > Materials Science

Title: Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers

Abstract: Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers.
Comments: This manuscript has been submitted to Applied Physics Letters
Subjects: Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph)
Cite as: arXiv:2004.02622 [cond-mat.mtrl-sci]
  (or arXiv:2004.02622v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Jordi Antoja-Lleonart [view email]
[v1] Mon, 6 Apr 2020 12:42:46 GMT (946kb,D)

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