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Physics > Instrumentation and Detectors

Title: Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling

Abstract: A single-photon CMOS image sensor design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times and the results are averaged. Each signal measurement is statistically independent and by averaging the electronic readout noise is reduced to a level where single photons can be distinguished reliably. A pixel design using this method has been simulated in TCAD and several layouts have been generated for a 180 nm CMOS image sensor process. Using simulations, the noise performance of the pixel has been determined as a function of the number of samples, sense node capacitance, sampling rate, and transistor characteristics. The strengths and the limitations of the proposed design are discussed in detail, including the trade-off between noise performance and readout rate and the impact of charge transfer inefficiency. The projected performance of our first prototype device indicates that single-photon imaging is within reach and could enable ground-breaking performance in many scientific and industrial imaging applications.
Comments: 12 page, 8 figures. Published in Sensors Special Issue: Multipixels Single Photon Detectors for Quantum Applications
Subjects: Instrumentation and Detectors (physics.ins-det); Instrumentation and Methods for Astrophysics (astro-ph.IM)
Journal reference: Sensors 2020, 20(7), 2031
DOI: 10.3390/s20072031
Cite as: arXiv:2004.02675 [physics.ins-det]
  (or arXiv:2004.02675v1 [physics.ins-det] for this version)

Submission history

From: Elizabeth George [view email]
[v1] Mon, 6 Apr 2020 13:49:55 GMT (2023kb)

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