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Condensed Matter > Materials Science

Title: Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Abstract: Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.
Comments: 19 pages, 6 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: Phys. Rev. B 102, 085204 (2020)
DOI: 10.1103/PhysRevB.102.085204
Cite as: arXiv:2004.02710 [cond-mat.mtrl-sci]
  (or arXiv:2004.02710v3 [cond-mat.mtrl-sci] for this version)

Submission history

From: Shengqiang Zhou [view email]
[v1] Mon, 6 Apr 2020 14:49:03 GMT (1101kb)
[v2] Wed, 8 Apr 2020 04:11:54 GMT (1101kb)
[v3] Tue, 15 Sep 2020 08:57:35 GMT (1106kb)

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