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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene
(Submitted on 20 Apr 2020 (v1), last revised 14 Jan 2021 (this version, v2))
Abstract: We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number $\mathcal C=1$ and $\mathcal{C}= 2$ bands, occur at high temperatures and without the need for an external magnetic field.
Submission history
From: Emil J. Bergholtz [view email][v1] Mon, 20 Apr 2020 18:00:02 GMT (1125kb,D)
[v2] Thu, 14 Jan 2021 19:25:48 GMT (2211kb,D)
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