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Physics > Applied Physics
Title: Analytical Description of Mixed Ohmic and Space-Charge-Limited Conduction in Single-Carrier Devices
(Submitted on 28 Apr 2020 (v1), last revised 9 Oct 2020 (this version, v4))
Abstract: While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with this method. By combining the theories describing ohmic and space-charge-limited conduction, we derive a general analytical approach to extract the charge-carrier density, the conduction-band edge and the drift components of the current density-voltage curves of a single-carrier device when the semiconductor is either undoped, lightly doped or heavily doped. The presented model covers the entire voltage range, i.e., both the low-voltage regime and the Mott-Gurney regime. We demonstrate that there is an upper limit to how doped a device must be before the current density-voltage curves are significantly affected, and we show that the background charge-carrier density must be considered to accurately model the drift component in the low-voltage regime, regardless of whether the device is doped or not. We expect that the final analytical expressions presented herein to be directly useful to experimentalists studying charge transport in novel materials and devices.
Submission history
From: Jason Alexander Röhr PhD [view email][v1] Tue, 28 Apr 2020 17:53:02 GMT (2484kb)
[v2] Mon, 10 Aug 2020 15:04:19 GMT (2685kb)
[v3] Fri, 18 Sep 2020 15:33:28 GMT (2848kb)
[v4] Fri, 9 Oct 2020 14:51:13 GMT (1816kb)
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