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Condensed Matter > Materials Science
Title: Monolayer 2D semiconducting tellurides for high-mobility electronics
(Submitted on 22 May 2020 (v1), last revised 1 Jun 2020 (this version, v2))
Abstract: Discovery and design of two-dimensional (2D) materials with suitable band gaps and high carrier mobility is of vital importance for photonics, optoelectronics, and high-speed electronics. In this work, based on first principles calculations using density functional theory (DFT) with PBE and HSE functionals, we introduce a family of monolayer isostructural semiconducting tellurides M2N2Te8, with M = {Ti, Zr, Hf} and N= {Si, Ge}. These compounds have been identified to possess direct band gaps from 1.0 eV to 1.31 eV, which are well suited for photonics and optoelectronics applications. Additionally, anisotropic in-plane transport behavior is observed and small electron and hole (0.11 - 0.15 me) effective masses are identified along the dominant transport direction. Ultra-high carrier mobility is predicted for this family of 2D compounds which host great promise for potential applications in high-speed electronic devices. Detailed analysis of electronic structures reveals the origins of the promising properties of this unique class of 2D telluride materials.
Submission history
From: Huta Banjade [view email][v1] Fri, 22 May 2020 20:24:10 GMT (754kb)
[v2] Mon, 1 Jun 2020 23:59:24 GMT (663kb)
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