Title: Half-quantized anomalous Hall effect in magnetic axion insulator MnBi$_2$Te$_4$/(Bi$_2$Te$_3$)$_n$

Abstract: The rising of topological materials MnBi$_2$Te$_4$/(Bi$_2$Te$_3$)$_n$ with built-in magnetization provides a great platform for the realization of long-sought axion insulators with time-reversal breaking. As the direct evidence of the quantized bulk magnetoelectric coupling, half-quantized anomalous Hall effect at the gapped surface are predicted in axion insulators based on simplified models, yet to be realized. Using both model Hamiltonian and first-principles calculations, we demonstrate that by tailoring the magnetization and interlayer electron hopping, a rich three-dimensional topological phase diagram can be established based on MnBi$_2$Te$_4$/(Bi$_2$Te$_3$)$_n$ systems. It includes three types of topologically distinct insulating phases bridged by a Weyl semimetal phase. Among them, we find that the surface anomalous Hall conductivity in the axion-insulator phase is a well-localized quantity either saturated at or oscillating around $e^2/2h$, depending on the magnetic homogeneity. With the discussion of the experimental prerequisites and proposals, our study is significant step forward towards the realization of half-quantized surface anomalous Hall effect in realistic material systems.