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Condensed Matter > Materials Science

Title: First-principles calculations of thermal electron emission from H$^-$ in silicon

Abstract: Thermal electron emission process of a hydrogen impurity is an important topic of fundamental semiconductor physics. Despite of decades-long study, theory is not established yet. Here, we study the process of $\mathrm{H}^{-}$ in silicon, $\mathrm{H^{-}} \to \mathrm{H^{0}} + e^{-}$, using a first-principles calculation. Our calculation indicates that the process consists of two steps: slow diffusion of H$^{-}$ from a tetrahedral site to a bond-center site, which is the rate-limiting step, and faster nonradiative transition from $\mathrm{H}^{-}$ to $\mathrm{H}^{0} + e^{-}$ that occurs subsequently at the body-center site. The calculated rate is consistent with a deep level transient spectroscopy experiment
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2005.14103 [cond-mat.mtrl-sci]
  (or arXiv:2005.14103v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Yoshiyuki Yamamoto [view email]
[v1] Thu, 28 May 2020 15:53:40 GMT (877kb)

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