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Condensed Matter > Materials Science

Title: Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy

Abstract: Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be explained by the $\alpha \beta \alpha \beta$ stacking sequence of the wurtzite crystal structure, which results in steps with alternating $A$ and $B$ edge structures for the lowest energy step azimuths, i.e. steps normal to $[0 1 \bar{1} 0]$ type directions. Predicted differences in the adatom attachment kinetics at $A$ and $B$ steps would lead to alternating $\alpha$ and $\beta$ terrace widths. However, because of the difficulty of experimentally identifying which step is $A$ or $B$, it has not been possible to determine the absolute difference in their behavior, e.g. which step has higher adatom attachment rate constants. Here we show that surface X-ray scattering can measure the fraction of $\alpha$ and $\beta$ terraces, and thus unambiguously differentiate the growth dynamics of $A$ and $B$ steps. We first present calculations of the intensity profiles of GaN crystal truncation rods (CTRs) that demonstrate a marked dependence on the $\alpha$ terrace fraction $f_\alpha$. We then present surface X-ray scattering measurements performed \textit{in situ} during homoepitaxial growth on (0001) GaN by vapor phase epitaxy. By analyzing the shapes of the $(1 0 \bar{1} L)$ and $(0 1 \bar{1} L)$ CTRs, we determine that the steady-state $f_\alpha$ increases at higher growth rate, indicating that attachment rate constants are higher at $A$ steps than at $B$ steps. We also observe the dynamics of $f_\alpha$ after growth conditions are changed. The results are analyzed using a Burton-Cabrera-Frank model for a surface with alternating step types, to extract values for the kinetic parameters of $A$ and $B$ steps. These are compared with predictions for GaN (0001).
Comments: 18 pages, 30 figures, 12 tables, 3 appendices. This is long paper to accompany "Do A or B Steps Have Faster Kinetics during Hexagonal Crystal Growth?" by same author list
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2007.05083 [cond-mat.mtrl-sci]
  (or arXiv:2007.05083v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Carol Thompson [view email]
[v1] Thu, 9 Jul 2020 21:49:20 GMT (1247kb)

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