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Condensed Matter > Materials Science

Title: Do A or B Steps Have Faster Kinetics during Hexagonal Crystal Growth?

Abstract: The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal $\{0001\}$ surfaces that have alternating $A$ and $B$ structures and growth behaviors. However, because it is difficult to experimentally identify which step is $A$ or $B$, it has not been possible to determine which has faster adatom attachment kinetics. We show that surface X-ray scattering can unambiguously differentiate the growth behavior of $A$ and $B$ steps. Measurements performed in situ during growth of (0001) GaN find that the average width of terraces above $A$ steps increases with growth rate, indicating that attachment rate constants are higher for $A$ steps, in contrast to most predictions.
Comments: 6 pages, 5 figures, submitted with longer expository paper "Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy"
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2007.05090 [cond-mat.mtrl-sci]
  (or arXiv:2007.05090v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Carol Thompson [view email]
[v1] Thu, 9 Jul 2020 22:02:40 GMT (281kb)

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