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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire FETs
(Submitted on 10 Jul 2020 (v1), last revised 30 Dec 2021 (this version, v2))
Abstract: We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biases. This approach is based on a consistent consideration of basic electrostatic equation as a balance of electric and chemical potentials which allows us to obtain in a unified way the explicit analytic expressions continuously de-scribing the subthreshold and above threshold regions in nanosheet (symmetric and asymmetric) and nanowire FETs. Two conceptually different definitions of phenomenological threshold voltage are consistently introduced and discussed.
Submission history
From: Gennady Zebrev I. [view email][v1] Fri, 10 Jul 2020 12:21:10 GMT (580kb)
[v2] Thu, 30 Dec 2021 16:16:26 GMT (892kb)
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