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Physics > Instrumentation and Detectors

Title: Electro-optical imaging of electric fields in silicon sensors

Abstract: A conceptual set-up for measuring the electric field in silicon detectors by electro-optical imaging is proposed. It is based on the Franz-Keldysh effect which describes the electric field dependence of the absorption of light with an energy close to the silicon band gap. Using published data, a measurement accuracy of 1 to 4 kV/cm is estimated. The set-up is intended for determining the electric field in radiation-damaged silicon detectors as a function of irradiation fluence and particle type, temperature and bias voltage. The overall concept and the individual components of the set-up are presented.
Comments: 6 pages, 5 figures
Subjects: Instrumentation and Detectors (physics.ins-det)
Cite as: arXiv:2007.15503 [physics.ins-det]
  (or arXiv:2007.15503v1 [physics.ins-det] for this version)

Submission history

From: Annika Vauth [view email]
[v1] Thu, 30 Jul 2020 14:52:41 GMT (428kb,D)

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