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Physics > Applied Physics
Title: Piezoresistance in defect-engineered silicon
(Submitted on 11 Aug 2020 (v1), last revised 1 Jan 2021 (this version, v3))
Abstract: The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $\langle 110 \rangle$ PZR $\pi$-coefficient is $\pi \approx 65 \times 10^{-11}$~Pa$^{-1}$, similar to the value obtained in charge-neutral, p-type silicon. Below $V_t$, the mechanical stress dependence of the Shockley-Read-Hall (SRH) recombination parameters, specifically the divacancy trap energy $E_T$ which is estimated to vary by $\approx 30$~$\mu$V/MPa, yields $\pi \approx -25 \times 10^{-11}$~Pa$^{-1}$. The combination of space-charge-limited transport and defect engineering which significantly reduces SRH recombination lifetimes makes this work directly relevant to discussions of giant or anomalous PZR at small strains in nano-silicon whose characteristic dimension is larger than a few nanometers. In this limit the reduced electrostatic dimensionality lowers $V_t$ and amplifies space-charge-limited currents and efficient SRH recombination occurs via surface defects. The results reinforce the growing evidence that in steady state, electro-mechanically active defects can result in anomalous, but not giant, PZR.
Submission history
From: Alistair Rowe [view email][v1] Tue, 11 Aug 2020 15:29:49 GMT (1205kb,D)
[v2] Sat, 17 Oct 2020 16:22:26 GMT (1596kb,D)
[v3] Fri, 1 Jan 2021 10:18:51 GMT (1602kb,D)
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