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Physics > Instrumentation and Detectors

Title: Response of Windowless Silicon Avalanche Photo-Diodes to Electrons in the 90-900 eV Range

Abstract: We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy $E_e$, and varies from $2.147 \pm 0.027$ (for $E_e = 90$ eV) to $385.8 \pm 3.3$ (for $E_e = 900$ eV), when operating the diode at a bias of $V_{apd} = 350$ V.} This is the first time silicon avalanche photo-diodes are employed to measure electrons with $E_e < 1$ keV.
Subjects: Instrumentation and Detectors (physics.ins-det)
Cite as: arXiv:2008.07169 [physics.ins-det]
  (or arXiv:2008.07169v2 [physics.ins-det] for this version)

Submission history

From: Francesco Pandolfi [view email]
[v1] Mon, 17 Aug 2020 09:14:05 GMT (38834kb,D)
[v2] Tue, 29 Sep 2020 11:56:11 GMT (17404kb,D)

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