Title: Exploring the effect of varying regime of ion fluence on optical and surface electronic properties of CVD Grown Graphene

Abstract: The fact that the optoelectronic properties of nanomaterials can be manipulated by defect engineering for specific application has enabled graphene to outperform the conventional electronics. In this work, the influence of ion fluence dependent defect formation pathway on the modification of surface electronic properties of graphene has been investigated. The chemical vapor deposited (CVD) graphene was irradiated with swift heavy ion (SHI) at different fluence to study the defect formation mechanism and their role in modulation of its work function. The change in the morphological, optical and vibrational properties in the graphene are analyzed by atomic force microscopy (AFM), UV-Visible spectroscopy (UV-Vis) and Raman spectroscopy. The effect of different regime of ion dose on modification of surface electronic properties of graphene is investigated through scanning Kelvin microscope (SKPM). Ion fluence controlled defect formation channels are identified and their effects on the work function of graphene sheets are analyzed. It is observed that the lower fluence of SHI favors the doping effects while strain effects are dominant at the higher fluence. This preferential behavior of surface electronic properties of graphene can be explained in terms of variability of the defect production processes determined by the ion-beam fluence.