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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies

Abstract: In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of an efficient and reliable contact resistance extraction methodology based on individual device practical characteristics. A good agreement is achieved between the extracted values with the Y-function method used here and reference values obtained with other methods considering internal values as well as with more expensive methods involving fabricated test structures. The method enables a direct evaluation of different steps in the same technology and it embraces the temperature dependence of the contact characteristics. Channel phenomena have no impact on the extracted contact resistance values. High-frequency performance projections are obtained for fabricated devices based on the extracted contact resistance.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Semiconductor Science and Technology 35 125106 Oct. 2020
DOI: 10.1088/1361-6641/abbaed
Cite as: arXiv:2009.09661 [cond-mat.mes-hall]
  (or arXiv:2009.09661v3 [cond-mat.mes-hall] for this version)

Submission history

From: Anibal Pacheco-Sanchez [view email]
[v1] Mon, 21 Sep 2020 07:56:04 GMT (1855kb,D)
[v2] Thu, 8 Oct 2020 14:12:56 GMT (1855kb,D)
[v3] Thu, 22 Oct 2020 06:08:41 GMT (1855kb,D)

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