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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Strain Engineering 2D MoS$_{2}$ with Thin Film Stress Capping Layers
(Submitted on 22 Sep 2020 (this version), latest version 14 Jul 2021 (v3))
Abstract: In this work, we induce on-chip static strain into the transition metal dichalcogenide (TMDC) MoS$_{2}$ with e-beam evaporated stressed thin film multilayers. These thin film stressors are analogous to SiN$_{x}$ based stressors utilized in CMOS technology. We choose optically transparent thin film stressors to allow us to probe the strain transferred into the MoS$_{2}$ with Raman spectroscopy. We combine thickness dependent analyses from Raman peak shifts in MoS$_{2}$ and atomistic simulations to understand the strain transferred throughout each layer. This collaboration between experimental and theoretical efforts allows us to conclude that strain is transferred from the stressor into the top few layers of MoS$_{2}$ and the bottom layer is always partially fixed to the substrate. This proof of concept suggests that commonly used industrial strain engineering techniques may be easily implemented with 2D materials, as long as the c-axis strain transfer is considered.
Submission history
From: Tara Peña [view email][v1] Tue, 22 Sep 2020 15:36:51 GMT (719kb)
[v2] Wed, 27 Jan 2021 22:14:47 GMT (1580kb)
[v3] Wed, 14 Jul 2021 14:26:26 GMT (1686kb)
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