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Quantum Physics
Title: Broad diversity of near-infrared single-photon emitters in silicon
(Submitted on 21 Oct 2020 (v1), last revised 23 Oct 2020 (this version, v2))
Abstract: We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$\mu$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.
Submission history
From: Anaïs Dréau [view email][v1] Wed, 21 Oct 2020 15:19:17 GMT (502kb,AD)
[v2] Fri, 23 Oct 2020 14:44:09 GMT (502kb,AD)
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