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Condensed Matter > Materials Science
Title: Influence of Bi substitution with rare-earth elements on the transport properties of BiCuSeO oxyselenides
(Submitted on 21 Apr 2021 (v1), last revised 5 May 2022 (this version, v3))
Abstract: In this study, we demonstrate that introducing of rare-earth elements, $R$ = La or Pr, into the Bi-O charge reservoir layer of BiCuSeO leads to an increase of both, the charge carrier concentration and the effective mass. Although the charge carrier mobility slightly decreases upon Bi$^{3+}$ to $R^{3+}$ substitution, the electronic transport properties are significantly improved in a broad temperature range from 100 K to 800 K. In particular, the electrical resistivity decreases by two times, while the Seebeck coefficient drops from 323 ${\mu}$V K$^{-1}$ to 238 ${\mu}$V K$^{-1}$ at 800 K. Thus, a power factor of nearly 3 ${\mu}$W cm$^{-1}$ K$^{-2}$ is achieved for Bi$_{0.92}$La$_{0.08}$CuSeO sample at 800 K. Meanwhile, a noticeable decrease of the lattice thermal conductivity is observed for the substituted samples, which can be attributed to the enhanced point defect scattering mostly originated from atomic mass fluctuations between $R$ and Bi. Ultimately, a maximum $zT$ value of nearly 0.34 at 800 K is obtained for the Bi$_{0.92}$La$_{0.08}$CuSeO sample, which is ~30% higher than that of pristine BiCuSeO.
Submission history
From: Andrei Novitskii [view email][v1] Wed, 21 Apr 2021 13:05:21 GMT (7002kb)
[v2] Fri, 15 Oct 2021 06:43:24 GMT (4026kb)
[v3] Thu, 5 May 2022 08:16:19 GMT (4444kb)
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