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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO$_{x}$-Based Resistive Switching Memory Devices with Magneto-Resistive Responses

Abstract: Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^{\gamma}$ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge's empirical relation, we found that the Hooge's parameter $\alpha$ and the exponent $\gamma$ exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlO$_x$ barrier, plays an essential role in the charge transport dynamics of AlO$_x$-based RS memory devices.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Electronics, 10(20), 2525 (2021)
DOI: 10.3390/electronics10202525
Cite as: arXiv:2110.09331 [cond-mat.mes-hall]
  (or arXiv:2110.09331v1 [cond-mat.mes-hall] for this version)

Submission history

From: César González-Ruano [view email]
[v1] Mon, 18 Oct 2021 13:59:08 GMT (958kb)

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