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Condensed Matter > Materials Science
Title: Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO2 by surface energy
(Submitted on 9 Nov 2021 (v1), last revised 31 Aug 2022 (this version, v3))
Abstract: Doped HfO2 and HfO2-ZrO2 compounds are gaining significant interest thanks to their ferroelectric properties in ultrathin films. Here, we show that ZrO2 could be a playground for doping and strain engineering to increase the thickness in epitaxial thin films. Based on surface energy considerations supported by ab initio calculations, we show that a pure ZrO2 epitaxial thin film exhibits a ferroelectric rhombohedral phase (r-phase, with R3m space group) more stable than for the Hf0.5Zr0.5O2 (HZO) and pure HfO2 cases. In particular, for a thickness up to 37 nm we experimentally evidence a single (111)-oriented r-phase in ZrO2 films deposited on La2/3Sr1/3MnO3-buffered DyScO3(110) substrate, while a tetragonal phase is observed alongside the rhombohedral one on SrTiO3(001). The formation of this r-phase is discussed and compared between HfO2, ZrO2 and HZO, highlighting the role of surface energy.
Submission history
From: Thomas Maroutian [view email][v1] Tue, 9 Nov 2021 14:28:17 GMT (1212kb)
[v2] Wed, 24 Nov 2021 16:31:06 GMT (1235kb)
[v3] Wed, 31 Aug 2022 17:08:14 GMT (906kb)
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