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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Dirac-Source Diode with Sub-unity Ideality Factor

Abstract: An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n<1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (100000). The realisation of a DS Schottky diode paves the way for the development of low-power electronic circuits.
Comments: 28 pages, 14 figures, submitted to Nature Communications
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2112.00924 [cond-mat.mes-hall]
  (or arXiv:2112.00924v1 [cond-mat.mes-hall] for this version)

Submission history

From: Myeong Gyuho [view email]
[v1] Thu, 2 Dec 2021 01:45:08 GMT (1713kb)

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