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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Ultrafast laser interaction with transparent multi-layer SiO2/Si3N4 films

Authors: R. Ricca (1), V. Boureau (2), Y. Bellouard (1) ((1) Galatea Laboratory, IMT/STI, Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland, (2) Interdisciplinary Centre for Electron Microscopy, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland)
Abstract: We investigate the use of ultrafast lasers exposure to induce localized crystallization and elemental redistribution in amorphous dielectric multi-layers, composed of alternating Si3N4and SiO2layers of sub-micron thickness. Specifically,we report on the occurrence of a laser-induced elemental intermixing process and on the presence of silicon nanocrystals clusters localized within the multi-layers structure. The spatial distribution of these clusters goes significantly beyond the zone under direct laser exposure providing evidences of energy being channeled transversely to the laser propagation axis at the interface of the nanoscale layers. Thanks to the extreme conditions reigning during laser exposure, this process transposed to various materials may offer a pathway for local and selective crystallization of a variety of compounds and phases, difficult to obtain otherwise.
Comments: 12 pages, 7 figures. The following article has been submitted to Journal of Applied Physics. After it is published, it will be found at this https URL
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
DOI: 10.1063/5.0065726
Cite as: arXiv:2112.00997 [cond-mat.mes-hall]
  (or arXiv:2112.00997v1 [cond-mat.mes-hall] for this version)

Submission history

From: Ruben Ricca [view email]
[v1] Thu, 2 Dec 2021 06:10:34 GMT (3325kb)

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