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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Performance Investigation of p-FETs Based on Highly Air-stable Mono-layer Pentagonal PdSe2

Abstract: Pentagonal PdSe$_2$ is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance of p-type FET based on PdSe$_2$ mono-layer using multi-scale simulation framework combining Density functional theory and quantum transport. We find that mono-layer PdSe$_2$ devices show excellent switching characteristics ($<$ 65 mV/decade) for the source-drain direction aligned along both [010] and [100] directions. Both directions also show good on-state current and large transconductance, though these are larger along the [010] direction for a 15 nm channel device. The channel length scaling study of these p-FETs indicates that channel length can be easily scaled down to 7 nm without any significance compromise in the performance. Going below 7 nm, we find that there is a severe degradation in the sub-threshold swing for 4 nm channel length. However, this degradation can be minimized by introducing an underlap structure. The length of underlap is determined by the trade-off between on-state current and the switching performance.
Comments: 8 pages, 9 figures, IEEE Transactions on Electron Devices 68 (12), 6551-6557
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: IEEE Transactions on Electron Devices (Volume: 68, Issue: 12, Dec. 2021)
DOI: 10.1109/TED.2021.3119552
Cite as: arXiv:2201.03493 [cond-mat.mes-hall]
  (or arXiv:2201.03493v1 [cond-mat.mes-hall] for this version)

Submission history

From: Keshari Nandan [view email]
[v1] Mon, 10 Jan 2022 17:43:56 GMT (5189kb,D)
[v2] Tue, 10 May 2022 12:52:35 GMT (5189kb,D)
[v3] Tue, 26 Jul 2022 12:48:34 GMT (5189kb,D)

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