Current browse context:
cond-mat.mes-hall
Change to browse by:
References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Wafer-scale low-disorder 2DEG in $^{28}$Si/SiGe without an epitaxial Si cap
(Submitted on 16 Feb 2022 (v1), last revised 21 Apr 2022 (this version, v2))
Abstract: We grow $^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 {\deg}C. As a result, $^{28}$Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K we measure a high mean mobility of (1.8$\pm$0.5)$\times$10$^5$ cm$^2$/Vs and a low mean percolation density of (9$\pm$1)$\times$10$^{10}$ cm$^{-2}$. From the analysis of Shubnikov-de Haas oscillations at T = 190 mK we obtain a long mean single particle relaxation time of (8.1$\pm$0.5) ps, corresponding to a mean quantum mobility and quantum level broadening of (7.5$\pm$0.6)$\times$10$^4$ cm$^{2}$/Vs and (40$\pm$3) $\mu$eV, respectively, and a small mean Dingle ratio of (2.3$\pm$0.2), indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits.
Submission history
From: Giordano Scappucci [view email][v1] Wed, 16 Feb 2022 14:23:36 GMT (3677kb,D)
[v2] Thu, 21 Apr 2022 10:50:27 GMT (3730kb,D)
Link back to: arXiv, form interface, contact.