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Electrical Engineering and Systems Science > Systems and Control

Title: Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance

Abstract: ${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these ultra-wide-bandgap devices is usually limited by the relatively low 1-2 eV built-in potential at the Schottky barrier with most high-work-function metals. Here, we report heterojunction p-NiO/n-${\beta}$-Ga${_2}$O${_3}$ diodes fabrication and optimization for high-temperature device applications, demonstrating a current rectification ratio of more than 10${^6}$ at 410{\deg}C. The NiO heterojunction diode can achieve higher turn-on voltage and lower reverse leakage current compared to the Ni-based Schottky diode fabricated on the same single crystal ${\beta}$-Ga${_2}$O${_3}$ substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built-in potential and additional band offset. These results suggest that heterojunction p-n diodes based on ${\beta}$-Ga${_2}$O${_3}$ can significantly improve high-temperature electronic device and sensor performance.
Comments: 15 pages, 8 figures
Subjects: Systems and Control (eess.SY); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2204.00112 [eess.SY]
  (or arXiv:2204.00112v1 [eess.SY] for this version)

Submission history

From: Shahadat Sohel [view email]
[v1] Thu, 31 Mar 2022 21:48:49 GMT (636kb)

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