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Condensed Matter > Materials Science
Title: Controlled Curie temperature, magneto-crystal anisotropy, and valley polarization in 2D ferromagnetic Janus 2H-VSeS monolayer
(Submitted on 29 Apr 2022 (this version), latest version 7 Jul 2022 (v2))
Abstract: Inspired by the successful synthesis of two$-$dimensional (2D) V$-$based Janus dichloride monolayers with intrinsic ferromagnetism and high Curie temperature (T$_{c}$), the electronic structure, spin$-$valley splitting and magnetic anisotropy of Janus 2H$-$VSeS monolayers are investigated in detailed using first$-$principles calculations. The results show that the Janus 2H$-$VSeS monolayer exhibits a large valley splitting of 105meV, high T$_{c}$ of 278K and good magnetocrystalline anisotropy (0.31meV) contributed by the in-plane d$_{x^{2}-y^{2}}$/d$_{xy}$ orbitals of V atoms. The biaxial strain ($-$8%<$\varepsilon$<8%) can effectively tune the magnetic moments of V atom, valley splitting $\Delta$E, T$_{c}$ and MAE of Janus 2H$-$VSeS monolayer. The corresponding $\Delta$E and T$_{c}$ are adjusted from 72meV to 106.8meV and from 180K to 340K, respectively. The electronic phase transition from bipolar magnetic semiconductor (BMS) to half$-$semiconductor (HSC), spin gapless semiconductor (SGS), and half$-$metal (HM) is also observed due to the change of V 3d$-$orbital occupation. Due to the broken space$-$ and time$-$reversal symmetry, the opposite valley charge carriers carry opposite Berry curvature, which leads to prominent anomalous Hall conductivity at the K and K' valleys. The maximum modulation of Berry curvature can reach to 45% and 9.5% by applying the biaxial strain and charge carrier doping, respectively. The stable in$-$plane magnetocrystalline anisotropy and large spontaneous valley polarization make the ferromagnetic Janus 2H$-$VSeS monolayer a promising material for achieving the spintronics and valleytronics devices.
Submission history
From: Cunquan Li [view email][v1] Fri, 29 Apr 2022 23:35:58 GMT (48001kb)
[v2] Thu, 7 Jul 2022 14:28:51 GMT (7350kb)
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