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Condensed Matter > Mesoscale and Nanoscale Physics

Title: A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Abstract: High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current exceeding 10 A/mm, the performance of which is 2-3 times better than all known transistors with semiconductor channels. A record high transconductance of 4 S/mm is also achieved among all transistors with a planar structure. It is found that a high carrier density and high electron velocity both contribute to this remarkably high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I-V and split C-V measurements at room temperature confirm a high carrier density up to 6-7*10^13 /cm2 and a high velocity of about 10^7 cm/s. Ultra-thin oxide semiconductors, with a CNL located deep inside the conduction band, represent a promising new direction for the search of alternative channel materials for high-performance semiconductor devices.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph)
DOI: 10.1021/acsnano.2c10383
Cite as: arXiv:2205.00357 [cond-mat.mes-hall]
  (or arXiv:2205.00357v1 [cond-mat.mes-hall] for this version)

Submission history

From: Zehao Lin [view email]
[v1] Sat, 30 Apr 2022 22:32:50 GMT (2460kb)

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