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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Abstract: In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work, we assess the predictive power of these simulations by comparing the results of a single model with a large experimental data set of 110 devices with 48 different geometries. The devices are quantum point contacts of various shapes and sizes made with electrostatic gates deposited on top of a high mobility GaAs/GaAlAs two dimensional electron gas. We study the pinch-off voltages applied on the gates to deplete the two-dimensional electron gas in various spatial positions. We argue that the pinch-off voltages are a very robust signature of the charge distribution in the device. The large experimental data set allows us to critically review the modeling and arrive at a robust one-parameter model that can be calibrated in situ, a crucial step for making predictive simulations.
Comments: 33 pages, 16 figures, journal submission, corrected author name typo, added references, corrected visibility of appendix table, to appear in Physical Review Research
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Phys. Rev. Research 4, 043163, 2022
DOI: 10.1103/PhysRevResearch.4.043163
Cite as: arXiv:2205.00846 [cond-mat.mes-hall]
  (or arXiv:2205.00846v3 [cond-mat.mes-hall] for this version)

Submission history

From: Eleni Chatzikyriakou [view email]
[v1] Mon, 2 May 2022 12:18:02 GMT (7911kb,D)
[v2] Sun, 10 Jul 2022 16:47:29 GMT (7906kb,D)
[v3] Sun, 13 Nov 2022 08:27:30 GMT (7893kb,D)

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