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Condensed Matter > Strongly Correlated Electrons

Title: Identifying diverging-effective mass in MOSFET and $^3$He systems

Authors: Hyun-Tak Kim
Abstract: Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass near Mott insulators was measured in strongly correlated Mott systems such as a fermion $^3$He and a Si metal-oxide-semiconductor-field-effect transistor, and is closely fitted by the effective mass obtained by the extension of the Brinkman-Rice(BR) picture, $m^*/m=1/[1-(U/U_c)^2]=1/(1-{\kappa}^2_{BR}{\rho}^4)$ when ${\kappa}^2_{BR}{\approx}1({\neq}$1), where $0<U/U_c={\kappa}_{BR}{\rho}^2<1$, correlation strength is ${\kappa}_{BR}$, band-filling is ${\rho}$. Its identification is a percolation of a constant mass in the Brinkman-Rice picture. Over ${\kappa}_{BR}{\approx}0.96$ is evaluated.
Comments: 4 pages, 2 figures. This was presented and accepted in ICEIC 2022 Conference held on 6th-9th of February in 2022 at Grand Hyatt Jeju in Republic of Korea
Subjects: Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:2205.01916 [cond-mat.str-el]
  (or arXiv:2205.01916v1 [cond-mat.str-el] for this version)

Submission history

From: Hyuntak Kim [view email]
[v1] Wed, 4 May 2022 06:53:55 GMT (182kb,D)

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