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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Effects of charge dopants in quantum spin Hall materials

Authors: Tomasz Dietl
Abstract: Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence of paramagnetic acceptor dopants elucidates a variety of hitherto puzzling properties of two-dimensional topological semiconductors at the topological phase transition and in the regime of the quantum spin Hall effect. The concepts of charge correlation, Coulomb gap, exchange interaction between conducting electrons and holes localized on acceptors, strong coupling limit of the Kondo effect, and bound magnetic polaron explain a short topological protection length, high hole mobilities compared with electron mobilities, and different temperature dependence of the spin Hall resistance in HgTe and (Hg,Mn)Te quantum wells.
Comments: 5 pages, 3 figures; companion paper to arXiv:2209.03283
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2206.01613 [cond-mat.mes-hall]
  (or arXiv:2206.01613v2 [cond-mat.mes-hall] for this version)

Submission history

From: Tomasz Dietl [view email]
[v1] Fri, 3 Jun 2022 14:55:17 GMT (1113kb,D)
[v2] Thu, 8 Sep 2022 09:28:26 GMT (650kb,D)

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