Title: Modeling Defect-Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices

Abstract: Many semiconductors feature defects with charge state transition levels that can switch due to structure changes following defect ionization: we call this defect-level switching (DLS). For example, DX centers in III-V compounds, and oxygen vacancies in ZnO, can switch between deep and shallow donor configurations, and these bistable dynamics are responsible for persistent photoconductivity. We recently demonstrated highly-nonlinear, hysteretic, two-terminal electronic devices using DLS in CdS [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys. Rev. Applied 15, 014014 (2021).] The resulting devices operate without mass transport, and in the opposite sense to most resistive switches: they are in a high-conductivity state at equilibrium, and switch to a low-conductivity state at forward bias. Although DLS uses the same defect transitions that are responsible for persistent photoconductivity, DLS devices operate without light and can be orders-of-magnitude faster due to exponential tuning of transition rates with voltage. In this work we use theory and numerical simulation to explore the design space of DLS devices, emphasizing the tradeoff between speed and on/off ratio. Our results will be useful to guide future applications of these unusual devices.