Title: Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate (CuSCN) and Defect-Healing by I$_2$ Doping

Abstract: Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device performance. Despite the extensive electronic applications of CuSCN, its defect properties have not been studied in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN vacancies. A defect passivation strategy is introduced by adding solid I$_2$ to the processing solution. At small concentrations, the iodine is found to exist as I$^-$ which can substitute for the missing SCN$^-$ ligand, effectively healing the defective sites and restoring the coordination around Cu. Applying I$_2$-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I$_2$ doping method leads to the defect healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I$_2$ addition. The contact resistance and bias-stress stability of the devices also improve. This work shows a simple and effective route to improve hole transport properties of CuSCN which is applicable to wide-ranging electronic and optoelectronic applications.