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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
(Submitted on 22 Jun 2022 (v1), last revised 17 Mar 2023 (this version, v2))
Abstract: We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed quantized conductance in a quantum point contact, and determined the g-factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate tunable. Based on multiple Andreev reflections the semiconductor-superconductor interface is transparent, with an induced gap of 125 ${\mu}$eV. Our results demonstrate the viability of this platform for hybrid topological superconductor devices.
Submission history
From: Endre Tovari [view email][v1] Wed, 22 Jun 2022 11:18:10 GMT (3206kb,D)
[v2] Fri, 17 Mar 2023 07:49:48 GMT (3205kb,D)
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