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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect

Abstract: We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed quantized conductance in a quantum point contact, and determined the g-factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate tunable. Based on multiple Andreev reflections the semiconductor-superconductor interface is transparent, with an induced gap of 125 ${\mu}$eV. Our results demonstrate the viability of this platform for hybrid topological superconductor devices.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2206.10984 [cond-mat.mes-hall]
  (or arXiv:2206.10984v1 [cond-mat.mes-hall] for this version)

Submission history

From: Endre Tovari [view email]
[v1] Wed, 22 Jun 2022 11:18:10 GMT (3206kb,D)

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