Title: Magnetic Topological Transistor

Abstract: We propose a magnetic topological transistor based on MnBi$_{2}$Te$_{4}$, in which the "on" state (quantized conductance) and the "off" state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs. antiparallel) applied within a two-terminal junction. We explain that the magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and structure inversion asymmetry induced by the external electric fields. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off" states of the transistor are robust against disorder due to the topological nature of the surface states. Moreover, we reveal that Berry curvature matters in thin-film devices.