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Condensed Matter > Strongly Correlated Electrons

Title: Colossal piezoresistance in narrow-gap Eu5In2Sb6

Abstract: Piezoresistance, the change of a material's electrical resistance ($R$) in response to an applied mechanical stress ($\sigma$), is the driving principle of electromechanical devices such as strain gauges, accelerometers, and cantilever force sensors. Enhanced piezoresistance has been traditionally observed in two classes of uncorrelated materials: nonmagnetic semiconductors and composite structures. We report the discovery of a remarkably large piezoresistance in Eu$_5$In$_2$Sb$_6$ single crystals, wherein anisotropic metallic clusters naturally form within a semiconducting matrix due to electronic interactions. Eu$_5$In$_2$Sb$_6$ shows a highly anisotropic piezoresistance, and uniaxial pressure along [001] of only 0.4~GPa leads to a resistivity drop of more than 99.95\% that results in a colossal piezoresistance factor of $5000\times10^{-11}$Pa$^{-1}$. Our result not only reveals the role of interactions and phase separation in the realization of colossal piezoresistance, but it also highlights a novel route to multi-functional devices with large responses to both pressure and magnetic field.
Comments: 8 pages, 7 figures
Subjects: Strongly Correlated Electrons (cond-mat.str-el); Materials Science (cond-mat.mtrl-sci)
DOI: 10.1103/PhysRevB.106.045110
Cite as: arXiv:2206.14073 [cond-mat.str-el]
  (or arXiv:2206.14073v1 [cond-mat.str-el] for this version)

Submission history

From: Sean Thomas [view email]
[v1] Tue, 28 Jun 2022 15:16:02 GMT (4500kb,D)

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