Title: Disorder-induced topological phase transition in HgCdTe crystals

Abstract: By using the self-consistent Born approximation, we investigate a topological phase transition in bulk HgCdTe crystals induced by \emph{uncorrelated} disorder due to randomly distributed impurities and fluctuations in the Cd composition. By following the density-of-states evolution, we clearly demonstrate the topological phase transition, which can be understood in terms of the disorder-renormalized mass of Kane fermions. We find that the presence of heavy-hole band in HgCdTe crystals leads to the topological phase transition at much lower disorder strength than it is expected for conventional 3D topological insulators. Our theoretical results can be also applied to other narrow-gap zinc-blende semiconductors such as InAs, InSb and their ternary alloys InAsSb.