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Physics > Instrumentation and Detectors

Title: Precision measurement of Compton scattering in silicon with a skipper CCD for dark matter detection

Abstract: Experiments aiming to directly detect dark matter through particle recoils can achieve energy thresholds of $\mathcal{O}(1\,\mathrm{eV})$. In this regime, ionization signals from small-angle Compton scatters of environmental $\gamma$-rays constitute a significant background. Monte Carlo simulations used to build background models have not been experimentally validated at these low energies. We report a precision measurement of Compton scattering on silicon atomic shell electrons down to 23$\,$eV. A skipper charge-coupled device (CCD) with single-electron resolution, developed for the DAMIC-M experiment, was exposed to a $^{241}$Am $\gamma$-ray source over several months. Features associated with the silicon K, L$_{1}$, and L$_{2,3}$-shells are clearly identified, and scattering on valence electrons is detected for the first time below 100$\,$eV. We find that the relativistic impulse approximation for Compton scattering, which is implemented in Monte Carlo simulations commonly used by direct detection experiments, does not reproduce the measured spectrum below 0.5$\,$keV. The data are in better agreement with $ab$ $initio$ calculations originally developed for X-ray absorption spectroscopy.
Comments: 12 pages, 10 figures
Subjects: Instrumentation and Detectors (physics.ins-det); Instrumentation and Methods for Astrophysics (astro-ph.IM); High Energy Physics - Experiment (hep-ex)
Cite as: arXiv:2207.00809 [physics.ins-det]
  (or arXiv:2207.00809v1 [physics.ins-det] for this version)

Submission history

From: Danielle Norcini [view email]
[v1] Sat, 2 Jul 2022 12:01:50 GMT (5005kb,D)

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