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Physics > Applied Physics

Title: Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime

Abstract: Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Comments: 26 pages, 5 figures, 1 table
Subjects: Applied Physics (physics.app-ph)
Cite as: arXiv:2208.01798 [physics.app-ph]
  (or arXiv:2208.01798v1 [physics.app-ph] for this version)

Submission history

From: Shoichi Sato [view email]
[v1] Wed, 3 Aug 2022 00:53:59 GMT (1397kb)

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