Title: Photonic band gap formation in silicon carbide triangular cross-section photonic crystals

Abstract: Triangular cross-section silicon carbide (SiC) color center photonics has recently emerged as a very promising platform for quantum information processing. Here, we investigate dispersion relations in 1D SiC photonic crystals in triangular geometry and discuss the formation of photonic band gaps (PBGs). We compare the PBG formation trends and evaluate the fabrication suitability. Finally, we propose three distinct photonic device designs, resulting from unique PBG configurations, which are vital components for improving the efficiency of quantum photonic circuits.