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Condensed Matter > Materials Science

Title: STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si$_{1-x}$ B$_x$

Abstract: We report on the structural properties of highly B-doped silicon (> 2 at. %) by nanosecond laser doping. STEM analysis followed by HAADF contrast studies and GPA were employed. We investigate the crystalline quality, the deformation and the B distribution profile of the doped layer and compare the results to SIMS analyses and electrical Hall measurements. When increasing the active B concentration above 4.3 at.%, the fully strained, perfectly crystalline, Si:B layer starts showing dislocations and stacking faults. These only disappear around 8 at.% when the Si:B layer is well accommodated to the substrate. If we increase the B incorporation, we increasingly observe small precipitates, active B higher concentration filaments and stacking faults. At the highest concentration studied, large precipitates form which are probably related to the decrease of active B concentration and the gradual loss of superconductivity.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2208.05053 [cond-mat.mtrl-sci]
  (or arXiv:2208.05053v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Francesca Chiodi [view email]
[v1] Tue, 9 Aug 2022 21:54:34 GMT (3122kb)

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